rev.1.00, aug.29.2003, page 1 of 9 HAT1055R, HAT1055Rj silicon p channel power mos fet high speed power switching rej03g0067-0100z rev.1.00 aug.29.2003 features ? low on-resistance ? capable of 4.5 v gate drive ? high density mounting ? ?j? is for automotive application high temperature d-s leakage guarantee avalanche rating outline sop-8 1 2 3 4 5 6 7 8 1, 3 source 2, 4 gate 5, 6, 7, 8 drain g d s d g d s d mos1 mos2 1 2 78 4 56 3
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 2 of 9 absolute maximum ratings (ta = 25 c) item symbol ratings unit HAT1055R HAT1055Rj drain to source voltage v dss ?60 ?60 v gate to source voltage v gss 20 20 v drain current i d ?5 ?5 a drain peak current i d (pulse) note1 ?40 ?40 a avalanche current i ap note4 ??5a avalanche energy e ar note4 ?2.14mj channel dissipation pch note2 22w channel dissipation pch note3 33w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. 1 drive operation: when using the gla ss epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 3. 2 drive operation: when using the gla ss epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 4. value at tch = 25 c, rg 50 ?
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 3 of 9 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?60 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 zero gate voltage drain current i dss ???1 av ds = ?60 v, v gs = 0 zero gate voltage HAT1055R i dss ??? av ds = ?48 v, v gs = 0 drain current HAT1055Rj i dss ? ? ?10 a ta = 125 c gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.5 v v ds = ?10 v, i d = ?1 ma forward transfer admittance |y fs |3 5 ?s i d = ?2.5 a note5 , v ds = ?10 v static drain to source on state r ds(on) ?6076m ? i d = ?2.5 a note5 , v gs = ?10 v resistance r ds(on) ? 90 130 m ? i d = ?2.5 a note5 , v gs = ?4.5 v input capacitance ciss ? 1350 ? pf v ds = ?10 v, v gs = 0 output capacitance coss ? 135 ? pf f = 1 mhz reverse transfer capacitance crss ? 85 ? pf total gate charge qg ? 21 ? nc v dd = ?25 v gate to source charge qgs ? 3 ? nc v gs = ?10 v gate to drain charge qgd ? 4 ? nc i d = ?5 a turn-on delay time td(on) ? 20 ? ns v gs = ?10 v, i d = ?2.5 a rise time tr ? 15 ? ns v dd ? ?30 v turn-off delay time td(off) ? 55 ? ns r l = 12 ? fall time tf ? 10 ? ns r g = 4.7 ? body-drain diode forward voltage v df ? ?0.85 ?1.10 v i f = ?5 a, v gs = 0 note5 body-drain diode reverse recovery time trr ? 25 ? ns i f = ?5 a, v gs = 0 dif/dt = 100 a/s notes: 5. pulse test
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 4 of 9 main characteristics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics note 6: when using the glass epoxy board (fr4 40 40 1.6 mm) ?0.003 ?0.001 ?10 ?3 ?1 ?0.3 ?0.1 ?0.03 ?0.01 ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 ?100 ?30 100 s 10 s 1 ms pw = 10 ms note 6 dc operation (pw < 10 s) ta = 25 c 1 shot pulse ?10 ?8 ?6 ?4 ?2 0 ?2 ?4 ?6 ?8 ?10 ?4.5 v ?10 v ?3.5 v v gs =?2.5 v ?6 v pulse test ?10 ?8 ?6 ?4 ?2 0 ?1 ?2 ?3 ?4 ?5 tc = 75 c 25 c ?25 c v ds = ?10 v pulse test operation in this area is limited by r ds(on) channel dissipation pch (w) ambient temperature ta ( c) power vs. temperature derating 4.0 3.0 2.0 1.0 0 50 100 150 200 test condition: when using the glass epoxy board (fr4 40 40 1.6 mm) pw 10 s 2 drive oper ation 1 drive operation
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 5 of 9 drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance vs. temperature forward transfer admittance |yfs| (s) drain current i d (a) forward transfer admittance vs. drain current ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?10 0 50 20 5 10 1 2 0.5 25 c tc = ?25 c 75 c ds v = ?10 v pulse test ?1 ?10 ?100 ?3 ?30 1.0 0.2 0.5 0.1 0.02 0.01 0.05 v = ?4.5 v gs pulse test ?10 v 0.25 0.20 0.15 0.10 0.05 ?40 0 40 80 120 160 0 ?10 v i d = ?1, ?2 a v gs = ?4.5 v ?1, ?2 a ?5 a ?5 a pulse test gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage ?1 ?0.8 ?0.6 ?0.4 ?0.2 0 ?4 0?8 ?12 ?16 ?20 ?2 a ?1 a v (v) ds(on) drain to source saturation voltage pulse test i d = ?5 a
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 6 of 9 capacitance c (pf) drain source voltage v ds (v) typical capacitance vs. drain source voltage drain current i d (a) switching time t (ns) switching characteristics gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 0 ?10 ?20 ?30 ?40 ?50 2000 5000 1000 100 200 500 10 20 50 v gs = 0 f = 1 mhz ciss coss crss 0 ?20 ?40 ?60 ?80 ?100 0 0 ?4 ?8 ?12 ?16 8 16243240 ?20 1000 300 30 100 3 10 1 ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 v gs = ?10 v, v ds = ?30 v pw = 5 s, duty < 1 % t f r t d(on) t d(off) t v dd = ?10 v ?25 v ?50 v i d = ?5 a v ds v gs v dd = ?10 v ?25 v ?50 v reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 1000 500 50 100 20 10 200 di / dt = 100 a / s v gs = 0, ta = 25 c
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 7 of 9 source drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage ?10 ?8 ?6 ?4 ?2 0 ?0.4 0 ?0.8 ?1.2 ?1.6 ?2.0 v = 0, 5 v gs ?10 v ?5 v pulse test 2.5 0.5 1.0 1.5 2.0 25 50 75 100 125 150 0 i = ? 5 a v = ? 25 v duty < 0.1 % rg > 50 ap dd ? channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating d. u. t rg rg i monitor ap v monitor ds v dd 50 ? vin -15 v 0 i d v ds i ap v (br)dss l v dd avalanche test circuit avalanche waveform e = l ? i ? 2 1 v v - v ar ap dss dss dd 2 vin monitor d.u.t. vin -10 v r l v = -30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 8 of 9 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse d = 1 0.05 0.02 0.01 1shot pulse 10 100 1 m 10 m 100 m 1 10 100 1000 1000 0 10 1 0.1 0.01 0.001 0.0001 10 100 1 m 10 m 100 m 1 10 100 1000 1000 0 10 1 0.1 0.01 0.001 0.0001 pulse width pw (s) normalized transient thermal impedance vs. pulse width (1 drive operation) normalized transient thermal impedance s (t) normalized transient thermal impedance s (t) pulse width pw ( s ) normalized transient thermal impedance vs. pulse width (2 drive operation) dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) dm p pw t d = pw t ch - f(t) = s (t) x ch - f ch - f = 166 c/w, ta = 25 c when using the glass epoxy board (fr4 40 x 40 x 1.6 mm)
HAT1055R, HAT1055Rj rev.1.00, aug.29.2003, page 9 of 9 package dimensions package code jedec jeita mass (reference value) fp-8da conforms ? 0.085 g *dimension including the plating thickness base material dimension 1.75 max 4.90 0.25 0.15 0? ? 8? m 8 5 1 4 1.27 3.95 0.40 0.06 *0.42 0.08 5.3 max 0.75 max 0.14 + 0.11 ? 0.04 0.20 0.03 *0.22 0.03 0.60 + 0.67 ? 0.20 6.10 + 0.10 ? 0.30 1.08 as of january, 2003 unit: mm
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